- Two-way Planar Array Radar with Diamond- and X-shaped Configurations for Sidelobe Suppression
- Harmonic Trust Spectrum Modeling for Cognitive Radio Intrusion Detection
- Adaptive Entropy Prediction-based Lossless Compression for Efficient Data Transmission in Terrestrial and Underwater IoT Systems
- An Adaptive Threshold Tracking Area Update and Selective Probabilistic Paging Scheme for Signaling Cost Reduction in 5G NR Networks
- A Spatio-temporal Residual Attention Network with SNR-adaptive Weighting for MIMO-OFDM Channel Estimation
- Communication-efficient Embedded FFT Processing for Acoustic Telemetry in LPWAN-based Beehive Monitoring Systems
- FEC Hybrid Method Based on Reed–Solomon Codes for Transmitting Video Signal Over Limited Bandwidth and High Loss Rate Channels
- Dual Wide-band Microstrip Antenna for Wireless Communication Systems
- Network Threat Detection in IaaS Environments Based on Flow Log Data
- Machine Learning-based Automatic Modulation Classification for 5G-Advanced and 6G Waveforms: Robust Identification Under Realistic Channel Impairments
- Energy-delay Aware Data Collection in Mobile Sink-based Wireless Sensor Networks with Optimized Visiting Points and Two-level Data Aggregation
No. 1 (2001)
Published:
2001-03-30
Full Issue
ARTICLES FROM THIS ISSUE
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SiGe field effect transistors
Abstract
Recent and encouraging developments in Schottky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.
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Reliability of deep submicron MOSFETs
Abstract
In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of gate length and temperature is given. The main hot carrier effects and degradations are compared for bulk and SOI devices in a wide range of gate length, down to deep submicron. The worst case aging, device lifetime and maximum drain bias that can be applied are addressed. The physical mechanisms and the emergence of new phenomena at the origin of the degradation are studied for advanced MOS transistors. The impact of the substrate bias is also outlined.
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High-temperature instability processes in SOI structures and MOSFETs
Abstract
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.
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Challenges in ultrathin oxide layers formation
Abstract
In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefy described and their pros and cons are discussed.
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Piezoresistive sensors for atomic force microscopy
Abstract
An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors.
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On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors
Abstract
The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.
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Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures
Abstract
A physical model of grain boundary in uence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3x1019 cm-3
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Fabrication and properties of the field emission array with self-alignment gate electrode
Abstract
A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.
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Adsorption properties of porous silicon
Abstract
Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive device is given by micromechanical structure. In this paper we report on the piezoresistive cantilever beam structure with porous silicon adsorbing spot as a gas sensor.
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An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Abstract
An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called „pinch-off” region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
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A model of partially-depleted SOI MOSFETs in the subthreshold range
Abstract
A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the „pinch-off” region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
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Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics
Abstract
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
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Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film
Abstract
The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low- energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [mm/mm] and 200/20 [mm/mm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures
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Metastability problems in amorphous silicon
Abstract
The results of study of the in uence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.
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Implementation of the block cipher Rijndael using Altera FPGA
Abstract
A short description of the block cipher Rijndael is presented. Hardware implementation by means of the FPGA (field programmable gate array) technology is evaluated. Implementation results compared with other hardware implementations are summarized.
