Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics

Abstract

Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta 2 O 5 and TiO 2 . The comparison of the gate leakage current in MIS structures with SiO 2 layer as well Ta 2 O 5 and TiO 2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.