An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs

Authors

  • Jan Gibki

DOI:

https://doi.org/10.26636/jtit.2001.1.40

Keywords:

SOI MOSFET, floating body, avalanche ionization, recombination, displacement current, admittance

Abstract

An in uence of the selected physical phenom- ena: impact ionization in silicon and time variation of inter- nal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so- called

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Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J. Gibki, “An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs”, JTIT, vol. 3, no. 1, pp. 57–60, Mar. 2001, doi: 10.26636/jtit.2001.1.40.

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