Fabrication and properties of the field emission array with self-alignment gate electrode

Authors

  • Wolfgang Barth University of Kassel image/svg+xml
  • Tomasz Dębski Warsaw University of Technology image/svg+xml
  • Ivo W. Rangelow University of Kassel image/svg+xml
  • Piotr Grabiec Institute of Electron Technology, Warsaw
  • Krystyna Studzińska Institute of Electron Technology, Warsaw
  • Michał Zaborowski Institute of Electron Technology, Warsaw
  • Stanisław Mitura Lodz University of Technology image/svg+xml
  • Steffen Biehl mSenMikrosystemtechnikGmbH, Germany
  • Peter Hudek Slovakian Academy of Science
  • Ivan Kostic Slovakian Academy of Science
  • Andrzej Jakubowski Warsaw University of Technology image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2001.1.42

Keywords:

field emission array, field emission display, diamond-like-carbon layers emission, silicon micromachining, self- alignment technology

Abstract

A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.

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References

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Submitted

2023-04-06

Published

2001-03-30

Issue

No. 1 (2001)

Section

RESEARCH ARTICLES

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
W. Barth, “Fabrication and properties of the field emission array with self-alignment gate electrode”, JTIT, vol. 3, no. 1, pp. 49–52, Mar. 2001, doi: 10.26636/jtit.2001.1.42.

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