SiGe field effect transistors

Authors

  • Terrence E. Whall
  • Evan H. C. Parker

DOI:

https://doi.org/10.26636/jtit.2001.1.49

Keywords:

SiGe, FETs, epitaxy, circuits

Abstract

Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.

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Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
T. E. Whall and E. H. C. Parker, “SiGe field effect transistors”, JTIT, vol. 3, no. 1, pp. 3–12, Mar. 2001, doi: 10.26636/jtit.2001.1.49.