Metastability problems in amorphous silicon

Authors

  • Stanisław M. Pietruszko
  • Marek Kostana

DOI:

https://doi.org/10.26636/jtit.2001.1.36

Keywords:

amorphous silicon, metastability, thermal quenching

Abstract

The results of study of the in uence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.

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Submitted

2023-04-06

Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
S. M. Pietruszko and M. Kostana, “Metastability problems in amorphous silicon”, JTIT, vol. 3, no. 1, pp. 76–79, Mar. 2001, doi: 10.26636/jtit.2001.1.36.