Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

Authors

  • Grzegorz Głuszko
  • Lidia Łukasiak
  • Valeriya Kilchytska
  • Tsung Ming Chung
  • Benoit Olbrechts
  • Denis Flandre
  • Jean-Pierre Raskin

DOI:

https://doi.org/10.26636/jtit.2007.3.831

Keywords:

charge-pumping, electrical characterization, interface traps, SOI, wafer bonding, Si layer transfer

Abstract

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
G. Głuszko, “Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities”, JTIT, vol. 29, no. 3, pp. 61–66, Sep. 2007, doi: 10.26636/jtit.2007.3.831.

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