On-wafer wideband characterization: a powerful tool for improving the IC technologies

Authors

  • Dimitri Lederer
  • Jean-Pierre Raskin

DOI:

https://doi.org/10.26636/jtit.2007.2.811

Keywords:

silicon-on-insulator, MOSFET, wideband characterization, microwave frequency, extraction techniques, smallsignal equivalent circuit

Abstract

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

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Published

2007-06-30

Issue

No. 2 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
D. Lederer and J.-P. Raskin, “On-wafer wideband characterization: a powerful tool for improving the IC technologies”, JTIT, vol. 28, no. 2, pp. 69–77, Jun. 2007, doi: 10.26636/jtit.2007.2.811.