Charge-pumping characterization of FILOX vertical MOSFETs

Authors

  • Grzegorz Głuszko
  • Lidia Łukasiak
  • Enrico Gili
  • Peter Ashburn

DOI:

https://doi.org/10.26636/jtit.2007.3.833

Keywords:

charge-pumping, FILOX, interface trap, interface traps, MOSFET, vertical MOSFET

Abstract

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
G. Głuszko, L. Łukasiak, E. Gili, and P. Ashburn, “Charge-pumping characterization of FILOX vertical MOSFETs”, JTIT, vol. 29, no. 3, pp. 73–77, Sep. 2007, doi: 10.26636/jtit.2007.3.833.

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