The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs

Authors

  • Mostafa Emam
  • Samer Houri
  • Danielle Vanhoenacker-Janvier
  • Jean-Pierre Raskin

DOI:

https://doi.org/10.26636/jtit.2009.4.957

Keywords:

cutoff frequency fT, intrinsic gain, mechanical stress, piezoresistance coefficiet, SOI MOSFET

Abstract

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also extracted as a function of applied mechanical stress. Piezoresistance coefficient is shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.

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Published

2009-12-30

Issue

No. 4 (2009)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M. Emam, S. Houri, D. Vanhoenacker-Janvier, and J.-P. Raskin, “The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs”, JTIT, vol. 38, no. 4, pp. 18–24, Dec. 2009, doi: 10.26636/jtit.2009.4.957.