Characterization of SOI MOSFETs by means of charge-pumping

Authors

DOI:

https://doi.org/10.26636/jtit.2007.3.832

Keywords:

charge-pumping, electrical characterization, interface traps, SOI MOSFET

Abstract

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.

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References

[1] J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI. Boston: Kluwer, 2004.
View in Google Scholar

[2] S. Cristoloveanu, "Silicon on insulator technologies and devices: from present to future", Solid-State Electron., vol. 45, no. 8, pp. 1403-1411, 2001.
View in Google Scholar

[3] N. Nenadovic et al., "RF power silicon-on-glass VDMOSFETs", IEEE Electron Dev. Lett., vol. 25, no. 6, pp. 424-426, 2004.
View in Google Scholar

[4] J. S. Brugler and P. G. A. Jespers, "Charge pumping in MOS devices", IEEE Trans. Electron Dev., vol. 16, p. 297, 1969.
View in Google Scholar

[5] M. C. Lemme et al., "Highly selective HBr etch process for fabrication of triple-gate nano-scale SOI-MOSFETs", Microelectron. Eng., vol. 73-74, pp. 346-350, 2004.
View in Google Scholar

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Submitted

2023-06-25

Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
G. Głuszko, S. Szostak, H. Gottlob, M. Lemme, and L. Łukasiak, “Characterization of SOI MOSFETs by means of charge-pumping”, JTIT, vol. 29, no. 3, pp. 67–72, Sep. 2007, doi: 10.26636/jtit.2007.3.832.

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