Challenges in ultrathin oxide layers formation

Abstract

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are brie y described and their pros and cons are discussed.