Optimization of selected parameters of SiGe HBT transistors
DOI:
https://doi.org/10.26636/jtit.2000.3-4.31Keywords:
heterojunction bipolar transistor, base transit time, current gainAbstract
SiGe-base HBTs with Gaussian doping distribution are modeled including the effect of the drift field and variable Ge concentration in the base on the diffusion coefficient. Two different Ge distributions in the base are considered: a triangular one and a box one the patterned substrates suffered from a high loading effect demanding an accurate calibration.
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[1] T. C. Lu and J. B. Kuo, "An analytical SiGe-base HBT model and its effects on BiCMOS inverter circuit", IEEE Trans. Electron Dev., vol. 41, pp. 272-275, 1993.
View in Google Scholar
[2] J. D. Cressler, J. H. Comfort, E. F. Crabbe, G. L. Patton, J. M. C. Stork, J. Y. C. Sun, and B. S. Meyerson, "On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. Part I: Transistor DC design considerations", IEEE Trans. Electron Dev., vol. 40, no. 3, pp. 525-541, 1993.
View in Google Scholar
[3] J. D. Cressler, E. F. Crabbe, J. H. Comfort, J. M. C. Stork, and J. Y. C. Sun, "On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. Part II: Circuit performance issues", IEEE Trans. Electron Dev., vol. 40, no. 3, pp. 542-555, 1993.
View in Google Scholar
[4] V. S. Patri and M. J. Kumar, " Profile design considerations for minimizing base transit time in SiGe HBT's", IEEE Trans. Electron Dev., vol. 45, no. 8, pp. 1725-1731, 1998.
View in Google Scholar
[5] K. H. Kwok, "Analytical expressions of base transit time for SiGe HBTs with retrograde base profiles", Solid State Electron., vol. 43, no. 2, pp. 275-283, 1999.
View in Google Scholar
[6] K. Suzuki, "Optimum base doping profile for minimum base transit time", IEEE Trans. Electron Dev., vol. 38, no. 9, pp. 2128-2133, 1991.
View in Google Scholar
[7] D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y. C. Sun, B. S. Meyerson, and T. Tice, "Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits", IEEE Trans. Electron Dev., vol. 42, no. 3, pp. 455-468, 1995.
View in Google Scholar
[8] H. Kroemer, "Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region", Solid State Electron., vol. 28, no. 11, pp. 1101-1103, 1985.
View in Google Scholar
[9] W. Slotboom and H. de Graaff, "Measurements of bandgap narrowing in Si bipolar transistors", Solid State Electron., vol. 19, no. 10, pp. 857-862, 1976.
View in Google Scholar
[10] K. Suzuki and N. Nakayama, "Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction", IEEE Trans. Electron Dev., vol. 39, no. 3, pp. 623-628, 1992.
View in Google Scholar
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