Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys

Authors

  • Jędrzej Stęszewski
  • Andrzej Jakubowski
  • Michael L. Korwin-Pawlowski

DOI:

https://doi.org/10.26636/jtit.2007.3.837

Keywords:

silicon carbide, SiC MOSFET, 4H-SiC, 6H-SiC, Crosslight Apsys, Silvaco Atlas

Abstract

A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments

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Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J. Stęszewski, A. Jakubowski, and M. L. Korwin-Pawlowski, “Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys”, JTIT, vol. 29, no. 3, pp. 93–95, Sep. 2007, doi: 10.26636/jtit.2007.3.837.

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