An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs

Authors

  • Daniel Tomaszewski
  • Lidia Łukasiak
  • Jan Gibki
  • Andrzej Jakubowski

DOI:

https://doi.org/10.26636/jtit.2001.1.40

Keywords:

SOI MOSFET, floating body, avalanche ionization, recombination, displacement current, admittance

Abstract

An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called „pinch-off” region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.

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Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
D. Tomaszewski, L. Łukasiak, J. Gibki, and A. Jakubowski, “An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs”, JTIT, vol. 3, no. 1, pp. 57–60, Mar. 2001, doi: 10.26636/jtit.2001.1.40.

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