Standardization of the compact model coding: non-fully depleted SOI MOSFET example

Authors

  • Władysław Grabiński Freescale, Geneva Modeling Center, Switzerland
  • Daniel Tomaszewski Institute of Electron Technology, Poland
  • Laurent Lemaitre Freescale, Geneva Modeling Center, Switzerland
  • Andrzej Jakubowski Warsaw University of Technology image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2005.1.278

Keywords:

Verilog-AMS, compact model coding, SOI MOSFET

Abstract

The initiative to standardize compact (SPICE-like) modelling has recently gained momentum in the semiconductor industry. Some of the important issues of the compact modelling must be addressed, such as accuracy, testing, availability, version control, verification and validation. Most compact models developed in the past did not account for these key issues which are of highest importance when introducing a new compact model to the semiconductor industry in particular going beyond the ITRS roadmap technological 100 nm node. An important application for non-fully depleted SOI technology is high performance microprocessors, other high speed logic chips, as well as analogue RF circuits. The IC design process requires a compact model that describes in detail the electrical characteristics of SOI MOSFET transistors. In this paper a non-fully depleted SOI MOSFET model and its Verilog-AMS description will be presented.

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References

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Submitted

2023-04-09

Published

2005-03-30

Issue

Section

RESEARCH ARTICLES

How to Cite

[1]
W. Grabiński, D. Tomaszewski, L. Lemaitre, and A. Jakubowski, “Standardization of the compact model coding: non-fully depleted SOI MOSFET example”, JTIT, vol. 19, no. 1, pp. 135–141, Mar. 2005, doi: 10.26636/jtit.2005.1.278.

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