Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes

Authors

  • Tomasz Bieniek Warsaw University of Technology image/svg+xml
  • Romuald B. Beck Warsaw University of Technology image/svg+xml
  • Andrzej Jakubowski Warsaw University of Technology image/svg+xml
  • Piotr Konarski Industrial Institute of Electronics, Warsaw, Poland
  • Michał Ćwil Warsaw University of Technology image/svg+xml
  • Patrick Hoffmann Brandenburg University of Technology Cottbus-Senftenberg image/svg+xml
  • Dieter Schmeißer Brandenburg University of Technology Cottbus-Senftenberg image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2007.3.820

Keywords:

CMOS, gate stack, oxynitride, plasma implantation

Abstract

Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from RF plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.

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Submitted

2023-06-25

Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
T. Bieniek, “Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes”, JTIT, vol. 29, no. 3, pp. 9–15, Sep. 2007, doi: 10.26636/jtit.2007.3.820.

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