Optimization of selected parameters of SiGe HBT transistors

Authors

  • Agnieszka Zaręba
  • Andrzej Jakubowski

DOI:

https://doi.org/10.26636/jtit.2000.3-4.31

Keywords:

heterojunction bipolar transistor, base transit time, current gain

Abstract

SiGe-base HBTs with Gaussian doping distribution are modeled including the effect of the drift field and variable Ge concentration in the base on the diffusion coefficient. Two different Ge distributions in the base are considered: a triangular one and a box one the patterned substrates suffered from a high loading effect demanding an accurate calibration.

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Published

2000-12-30

Issue

No. 3-4 (2000)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2000 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Zaręba and A. Jakubowski, “Optimization of selected parameters of SiGe HBT transistors”, JTIT, vol. 2, no. 3-4, pp. 15–18, Dec. 2000, doi: 10.26636/jtit.2000.3-4.31.

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