TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology

Authors

  • Mateusz Barański AGH University of Krakow image/svg+xml
  • Krzysztof Domański Institute of Electron Technology, Poland
  • Piotr Grabiec Institute of Electron Technology, Poland
  • Mirosław Grodner Institute of Electron Technology, Poland
  • Bohdan Jaroszewicz Institute of Electron Technology, Poland
  • Andrzej Kociubiński Institute of Electron Technology, Poland
  • Wojciech Kucewicz AGH University of Krakow image/svg+xml
  • Krzysztof Kucharski Institute of Electron Technology, Poland
  • Jacek Marczewski Institute of Electron Technology, Poland
  • Halina Niemiec AGH University of Krakow image/svg+xml
  • Maria Sapor AGH University of Krakow image/svg+xml
  • Daniel Tomaszewski Institute of Electron Technology, Poland

DOI:

https://doi.org/10.26636/jtit.2005.1.287

Keywords:

SOI CMOS technology, pixel detector, test structure

Abstract

This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-film SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.

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References

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Submitted

2023-04-09

Published

2005-03-30

Issue

Section

RESEARCH ARTICLES

How to Cite

[1]
M. Barański, “TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology”, JTIT, vol. 19, no. 1, pp. 85–93, Mar. 2005, doi: 10.26636/jtit.2005.1.287.

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