A versatile tool for extraction of MOSFETs parameters
DOI:
https://doi.org/10.26636/jtit.2005.1.279Keywords:
MOSFETs parameters, SPICE, least squares methodAbstract
Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data.
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Copyright (c) 2005 Journal of Telecommunications and Information Technology
This work is licensed under a Creative Commons Attribution 4.0 International License.
