Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO2 systems

Abstract

The influence of the strain on the optical properties of Si-SiO₂ system has been investigated by spectroscopic ellipsometry (SE), interferometry and weighing methods. Subtle changes of densification (compaction degree) in silicon dioxide layers on silicon substrates have been determined by weight technique (relying on measurements of the silicon dioxide layer mass and calculations of the volume). Elastic stress in the oxide layers has been measured by Fizeau fringes image analysis method. A comparison is made between the density of the silicon dioxide (r) and the results of calculations made using r = f (n) relations (where n is the refractive index) given in the literature.