Comparison of the barrier height measurements by the Powell method with the φMS measurement results

Authors

  • Krzysztof Piskorski Institute of Electron Technology, Poland
  • Andrzej Kudła Institute of Electron Technology, Poland
  • Witold Rzodkiewicz Institute of Electron Technology, Poland
  • Henryk M. Przewłocki Institute of Electron Technology, Poland

DOI:

https://doi.org/10.26636/jtit.2005.1.281

Keywords:

barrier height, effective contact potential difference, MOS system

Abstract

In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (φMS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the φMS measurement results.

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References

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[6] A. Kudła, „Fotoelektryczne metody wyznaczania wysokości barier potencjału w strukturze MOS”, Prace Instytutu Technologii Elektronowej, no. 5-7, pp. 7-115, 1998 (in Polish).
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Submitted

2023-04-09

Published

2005-03-30

Issue

No. 1 (2005)

Section

RESEARCH ARTICLES

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
K. Piskorski, A. Kudła, W. Rzodkiewicz, and H. M. Przewłocki, “Comparison of the barrier height measurements by the Powell method with the φMS measurement results”, JTIT, vol. 19, no. 1, pp. 120–123, Mar. 2005, doi: 10.26636/jtit.2005.1.281.

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