Development of 3C-SiC MOSFETs

Authors

  • Mietek Bakowski
  • Adolf Schöner
  • Per Ericsson
  • Helena Strömberg
  • Hiroyuki Nagasawa
  • Masayuki Abe

DOI:

https://doi.org/10.26636/jtit.2007.2.808

Keywords:

vertical MOSFET, 3C-SiC, channel mobility

Abstract

The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 μm and 4 μm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.

Downloads

Download data is not yet available.

Downloads

Published

2007-06-30

Issue

No. 2 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M. Bakowski, A. Schöner, P. Ericsson, H. Strömberg, H. Nagasawa, and M. Abe, “Development of 3C-SiC MOSFETs”, JTIT, vol. 28, no. 2, pp. 49–56, Jun. 2007, doi: 10.26636/jtit.2007.2.808.