Challenges in ultrathin oxide layers formation

Authors

  • Romuald B. Beck Warsaw University of Technology image/svg+xml
  • Andrzej Jakubowski Warsaw University of Technology image/svg+xml
  • Lidia Łukasiak Warsaw University of Technology image/svg+xml
  • Michał Korwin-Pawłowski X-ion S.A., France

DOI:

https://doi.org/10.26636/jtit.2001.1.46

Keywords:

silicon technology, oxidation, PECVD, RTO, gate oxide, ultrathin layers

Abstract

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefy described and their pros and cons are discussed.

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References

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Submitted

2023-04-06

Published

2001-03-30

Issue

No. 1 (2001)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2001 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
R. B. Beck, A. Jakubowski, L. Łukasiak, and M. Korwin-Pawłowski, “Challenges in ultrathin oxide layers formation”, JTIT, vol. 3, no. 1, pp. 27–34, Mar. 2001, doi: 10.26636/jtit.2001.1.46.

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