Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers

Authors

DOI:

https://doi.org/10.26636/jtit.2004.1.230

Keywords:

ultrathin SOI, scattering mechanisms, electron mobility

Abstract

Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.

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Submitted

2023-04-08

Published

2004-03-30

Issue

No. 1 (2004)

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ARTICLES FROM THIS ISSUE

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How to Cite

[1]
J. Walczak and B. Majkusiak, “Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers”, JTIT, vol. 15, no. 1, pp. 39–49, Mar. 2004, doi: 10.26636/jtit.2004.1.230.

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