Electron mobility and drain current in strained-Si MOSFET

Abstract

Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the “universal mobility” according to the available experimental data for unstrained Si MOSFETS. Then, employing the mobility parameters derived in the calibration process, electron mobility and the drain current have been calculated for strained-Si MOSFETs.