The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon

Authors

  • Małgorzata Kalisz Warsaw University of Technology image/svg+xml
  • Romuald B. Beck Warsaw University of Technology image/svg+xml
  • Adam Barcz Institute of Electron Technology, Warsaw, Poland
  • Michał Ćwil Warsaw University of Technology image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2007.3.823

Keywords:

fluorine, reactive ion etching, silicon fluoride, boron thermal diffusion, fluorocarbon plasma

Abstract

We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., RF power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing RF power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.

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References

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Submitted

2023-06-25

Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M. Kalisz, R. B. Beck, A. Barcz, and M. Ćwil, “The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon”, JTIT, vol. 29, no. 3, pp. 25–29, Sep. 2007, doi: 10.26636/jtit.2007.3.823.

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