Applying shallow nitrogen implantation from RF plasma for dual gate oxide technology

Authors

  • Tomasz Bieniek Warsaw University of Technology image/svg+xml
  • Romuald B. Beck Warsaw University of Technology image/svg+xml
  • Andrzej Jakubowski Warsaw University of Technology image/svg+xml
  • Grzegorz Głuszko Warsaw University of Technology image/svg+xml
  • Piotr Konarski Industrial Institute of Electronics, Warsaw, Poland
  • Michał Ćwil Warsaw University of Technology image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2007.3.819

Keywords:

CMOS, dual gate oxide, gate stack, oxynitride, plasma implantation

Abstract

The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the RF power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.

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References

[1] International Technology Roadmap for Semiconductors, http://public.itrs.net
View in Google Scholar

[2] T. Chevolleau, A. Szekeres, and S. Alexandrova, "Oxidation of N implanted silicon: optical and structural properties", Surf. Coat. Technol., vol. 151-152, pp. 281-284, 2002.
View in Google Scholar

[3] R. Rajkumar, M. Kumar, P. J. George, S. Mukherjee, and K. S. Chari, "Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation", Surf. Coat. Technol., vol. 156, no. 1-3, pp. 253-257, 2002.
View in Google Scholar

[4] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, "Formation of ultra-thin oxide layers by low temperature oxidation in r.f. plasma", Elektronika, vol. 10, pp. 6-7, 2004.
View in Google Scholar

[5] T. Bieniek, R. B. Beck, A. Jakubowski, and A. Kudła, "Study of extremely shallow nitrogen ions implantation in planar r.f. plasma reactors", Elektronika, vol. 2-3, pp. 9-10, 2005.
View in Google Scholar

[6] T. Bieniek, A. Wojtkiewicz, L. Łukasiak, and R. B. Beck, "Silicon dioxide as passivating, ultrathin layer in MOSFET gate stacks", J. Wide Bandgap Mater., vol. 8, no. 3-4, pp. 201-209, 2002.
View in Google Scholar

[7] T. Bieniek, R. Beck, A. Jakubowski, P. Hoffmann, D. Schmeisser, P. Konarski, and M. Cwil, "Formation of pedestal oxynitride layer by extremely shallow nitrogen implantation in planar r.f. plasma reactor", ECS Trans., vol. 1, no. 5, pp. 407-419, 2006.
View in Google Scholar

[8] B. Majkusiak and A. Jakubowski, "A technical formula for determining the insulator capacitance in a MOS structure", Solid State Electron., vol. 35, no. 2, pp. 223-224, 1992.
View in Google Scholar

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Submitted

2023-06-25

Published

2007-09-30

Issue

No. 3 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
T. Bieniek, R. B. Beck, A. Jakubowski, G. Głuszko, P. Konarski, and M. Ćwil, “Applying shallow nitrogen implantation from RF plasma for dual gate oxide technology”, JTIT, vol. 29, no. 3, pp. 3–8, Sep. 2007, doi: 10.26636/jtit.2007.3.819.

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