Gate dielectrics: process integration issues and electrical properties

Authors

DOI:

https://doi.org/10.26636/jtit.2005.1.298

Keywords:

high-k dielectrics, CMOS, Pr2O3, process integration, resist removal, wet chemical cleaning, wet chemical etching, RIE

Abstract

In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.

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References

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Submitted

2023-04-09

Published

2005-03-30

Issue

No. 1 (2005)

Section

RESEARCH ARTICLES

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
U. Schwalke, “Gate dielectrics: process integration issues and electrical properties”, JTIT, vol. 19, no. 1, pp. 7–10, Mar. 2005, doi: 10.26636/jtit.2005.1.298.

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