Gas micro-flow-metering with the in-channel Pt resistors

Authors

  • Jan M. Łysko Institute of Electron Technology, Poland
  • Bogdan Latecki Institute of Electron Technology, Poland
  • Marek W. Nikodem Institute of Electron Technology, Poland

DOI:

https://doi.org/10.26636/jtit.2005.1.285

Keywords:

detector, silicon, gas, flow, thermo-conductivity

Abstract

Standard thermo-conductive gas flow meters have the side-channel integrated with the temperature detector and heater coils, both winded around the tube. This design suffers from a high thermal capacity, reduced sensitivity in the lower limit flow range, high thermal inertia, long response time and necessity to amplify electronically the output signal. The newly designed TCD detector can be applied as a precise gas flow meter. To identify the composition of the unknown gas, the TCD unit requires a connection to the separation column, application of the reference channel and highly stable flow rate regulator. To measure flow rates, the same TCD unit requires only one flow channel application, with active resistors inside it, and a definition of the gas type. In this work principles of the TCD design, technology and flow rate sensitivity tests are presented.

Downloads

Download data is not yet available.

References

[1] B. Latecki, J. Łozinko, and J. M. Łysko, „Krzemowy katarometr - model analityczny”, Elektronizacja, no. 12, pp. 23-25, 2001 (in Polish).
View in Google Scholar

[2] J. M. Łysko, J. Łozinko, B. Latecki, M. Górska, K. Hejduk, and H. Wrzesińska, „Pt resistors technology for the TCD application”, in Proc. Joint IMEKO TC-1 & XXXIV MKM Conf., Wrocław, Poland, 2002, vol. III, pp. 111-118.
View in Google Scholar

[3] J. M. Łysko, M. Górska, A. Panas, K. Studzińska, and H. Wrzesińska, „BSC-type contacts formation in the katarometer technological sequence”, in Proc. Joint IMEKO TC-1 & XXXIV MKM Conf., Wrocław, Poland, 2002, vol. III, pp. 103-110.
View in Google Scholar

[4] J. M. Łysko, M. Nikodem, B. Latecki, M. Górska, and K. Studzińska, „Elements of the silicon TCD design and technology”, in Proc. 6th Int. Symp. Microelectron. Technol. Microsyst., Lviv, Ukraine, 2002; J. Lviv Polytech. Natl. Univ., vol. 458, pp. 61-66.
View in Google Scholar

Downloads

Submitted

2023-04-09

Published

2005-03-30

Issue

No. 1 (2005)

Section

RESEARCH ARTICLES

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J. M. Łysko, B. Latecki, and M. W. Nikodem, “Gas micro-flow-metering with the in-channel Pt resistors”, JTIT, vol. 19, no. 1, pp. 98–100, Mar. 2005, doi: 10.26636/jtit.2005.1.285.

Most read articles by the same author(s)