History of Semiconductors

Authors

DOI:

https://doi.org/10.26636/jtit.2010.1.1015

Keywords:

band theory, laser, Moore’s law, emiconductor, transistor

Abstract

The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).

Downloads

Download data is not yet available.

References

[1] G. Busch, “Early history of the physics and chemistry of semiconductors – from doubts to fact in a hundred years”, Eur. J. Phys., vol. 10, no. 4, pp. 254–263, 1989.
View in Google Scholar

[2] F. Laeri, F. Schüth, U. Simon, and M. Wark, Host-Guest-Systems Based on Nanoporous Crystals. Weinheim: Wiley, 2003, pp. 435–436.
View in Google Scholar

[3] T. K. Sarkar, R. Mailloux, A. A. Oliner, M. Salazar-Palma, and D. L. Sengupta, The History of Wireless. Hoboken: Wiley, 2006.
View in Google Scholar

[4] J. Orton, Semiconductors and the Information Revolution: Magic Crystals that Made IT Happen. Amsterdam: Academic Press/Elsevier, 2009, pp. 35–36
View in Google Scholar

[5] W. Mönch, Semiconductor Surfaces and Interfaces. Berlin-Heidelberg: Springer, 2001.
View in Google Scholar

[6] Z. A. Smith and K. D. Taylor, Renewable and Alternative Energy Sources: A Reference Handbook. Santa Barbara: ABC-CLIO Inc., 2008, p. 157.
View in Google Scholar

[7] J. Orton, The Story of Semiconductors. Oxford: Oxford University Press, 2004, p. 359.
View in Google Scholar

[8] J. Perlin, From Space to Earth: The Story of Solar Electricity. Cambridge: Harvard University Press, 2002, p. 17.
View in Google Scholar

[9] M. Grundman, The Physics of Semiconductors. Berlin-Heidelberg: Springer, 2006.
View in Google Scholar

[10] L. Hoddeson, E. Braun, J. Teichmann, and S. Weart, Out of the Crystal Maze: Chapters in the History of Solid State Physics. New York: Oxford University Press, 1992.
View in Google Scholar

[11] B. Lojek, History of Semiconductor Engineering. Berlin-Heidelberg: Springer, 2007.
View in Google Scholar

[12] P. K. Bondyopathyay, “Sir J. C. Bose’s diode detector received Marconi’s first transatlantic wireless signal of December 1901 (the “Italian navy coherer” scandal revisited)”, Proc. IEEE, vol. 86, no. 1, pp. 259–285, 1998.
View in Google Scholar

[13] M. Riordan and L. Hoddeson, “The origins of the p-n junction”, IEEE Spectrum, vol. 34, no. 6, p. 46, 1997.
View in Google Scholar

[14] J. Bardeen, “Solid state physics – 1947”, Solid State Technol., vol. 30, no. 12, pp. 69–71, 1987.
View in Google Scholar

[15] I. M. Ross, “The invention of the transistor”, Proc. IEEE, vol. 86, no. 1, pp. 7–27, 1998.
View in Google Scholar

[16] M. Riordan, L. Hoddeson, and C. Herring, “The invention of the transistor”, Rev. Mod. Phys., vol. 71, no. 2, pp. S336–S345, 1999.
View in Google Scholar

[17] T. S. Perry, “Not just blue sky”, IEEE Spectrum, vol. 39, no. 6, pp. 33–37, 2002.
View in Google Scholar

[18] J. A. Armstrong, “Solid state technology and the computer: 40 years later small is still beautiful”, Solid State Technol., vol. 30, no. 12, pp. 81–83, 1987.
View in Google Scholar

[19] L. Esaki, “Discovery of the tunnel diode”, IEEE Trans. Electron Dev., vol. 23, no. 7, pp. 644–647, 1976.
View in Google Scholar

[20] L. Berlin and H. Casey, Jr., “Robert Noyce and the tunnel diode”, IEEE Spectrum, vol. 42, no. 5, pp. 49–53, 2005.
View in Google Scholar

[21] L. Esaki and R. Tsu, “Superlattice and negative conductivity in semiconductors”, IBM Res. Note, RC-2418, March 1969.
View in Google Scholar

[22] L. Esaki and R. Tsu, “Superlattice and negative differential conductivity in semiconductors”, IBM J. Res. Develop., vol. 14, pp. 61–65, Jan. 1970.
View in Google Scholar

[23] M. M. Atalla, E. Tannenbaum, and E. J. Scheibner, “Stabilization of silicon surfaces by thermally grown oxides”, Bell. Syst. Tech. J., vol. 38, no. 3, pp. 749–783, 1959.
View in Google Scholar

[24] D. Kahng and M. M. Atalla, “Silicon-silicon dioxide field induced surface devices”, in Solid State Res. Conf., Pittsburgh, USA, 1960.
View in Google Scholar

[25] S. R. Hofstein and F. P. Heiman, “Silicon insulated-gate field-effect transistor”, Proc. IEEE, vol. 51, no. 9, pp. 1190–1202, 1963.
View in Google Scholar

[26] F. M. Wanlass and C. T. Sah, “Nanowatt logic using field-effect metal-oxide semiconductor triodes”, in Proc. Techn. Dig. IEEE 1963, Int. Solid-State Circ. Conf., Philadelphia, USA, 1963, pp. 32–33.
View in Google Scholar

[27] W. S. Boyle and G. E. Smith, “The inception of charge-coupled devices”, IEEE Trans. Electron Dev., vol. 23, no. 7, pp. 661–663, 1976.
View in Google Scholar

[28] R. E Kerwin, D. L. Klein, and J. C. Sarace, “Method for making MIS structures”, US Patent 3 475 234, filed March 27, 1967, issued Oct. 28, 1969.
View in Google Scholar

[29] T. Mochizuki, K. Shibata, T. Inoue, K. Obuchi, and M. Kashiwogi, “A new gate material for MOS devices – molybdenum silicide (MoSi2)”, in Proc. ECS Conf., Atlanta, USA, 1977, vol. 72–2, pp. 331–332.
View in Google Scholar

[30] K. C. Saraswat, F. Mohammedi, and J. D. Meindl, “WSi2 gate MOS devices”, in Proc. IEDM Tech. Dig., Washington, USA, 1979, pp. 462–464.
View in Google Scholar

[31] J. R. Brews, W. Fichtner, E. H. Nicollian, and S. N. Sze, “Generalized guide for MOSFET miniaturization”, IEEE Electron Dev. Lett., vol. 1, no. 1, pp. 2–4, 1980.
View in Google Scholar

[32] W. R. Hunter, T. C. Holloway, P. K. Chatterjee, and A. F. Tasch, “New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication”, in Proc. IEDM Tech. Dig., Washington, USA, 1980, pp. 764–767.
View in Google Scholar

[33] S. S. Wong, D. R. Bradbury, D. C. Chen, and K. Y. Chiu, “Elevated source/drain MOSFET”, in Proc. IEDM Tech. Dig., San Francisco, USA, 1984, pp. 634–637.
View in Google Scholar

[34] T. Mochizuki and K. D. Wise, “An n-channel MOSFET with Schottky source and drain”, IEEE Electron Dev. Lett., vol. 5, no. 4, pp. 108–110, 1984.
View in Google Scholar

[35] H. Tian, R. B. Hulfachor, J. J. Ellis-Monaghan, K. W. Kim, M. A. Littlejohn, J. R. Hauser, and N. A. Masnari, “An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFT applications”, IEEE Trans. Electron Dev., vol. 41, no. 10, pp. 1880–1882, 1994.
View in Google Scholar

[36] C.-T. Chuang, K. Bernstein, R. V. Joshi, R. Puri, K. Kim, E. J. Nowak, T. Ludwig, and I. Aller, “Focusing on planar device structures and strained silicon for handling silicon scaling issues in the deep sub-100 nm regime”, IEEE Circ. Dev. Mag., vol. 20, no. 1, pp. 6–19, 2004.
View in Google Scholar

[37] J.-P. Collinge, Silicon-on-Insulator Technology: Materials to VLSI. Boston/Dordrecht/London: Kluwer, 2004.
View in Google Scholar

[38] T. Skotnicki, J. A. Hutchby, T.-J. King, H.-S. P. Wong, and F. Boeuf, “The end of CMOS scaling”, IEEE Circ. Dev. Mag., vol. 21, no. 1, pp. 16–26, 2005.
View in Google Scholar

[39] J.-P. Colinge, “Multiple-gate SOI MOSFETs”, Solid-State Electron., vol. 48, no. 6, pp. 897–905, 2004.
View in Google Scholar

[40] E. E. Loebner, “Subhistories of the light emitting diode”, IEEE Trans. Electron Dev., vol. 23, no. 7, pp. 675–698, 1976.
View in Google Scholar

[41] N. Holonyak, “The semiconductor laser: a thirty-five year perspective”, Proc. IEEE, vol. 85, no. 11, pp. 1678–1693, 1997.
View in Google Scholar

[42] Z. I. Alferov, “Autobiography”, http://nobelprize.org/nobel prizes/physics/laureates/2000/alferov-autobio.html
View in Google Scholar

[43] G. E. Moore, “Progress in digital integrated electronics”, in Proc. IEDM Tech. Dig., Washington, USA, 1975, p. 103.
View in Google Scholar

[44] Hardware components, Intel processor history, http://www.interfacebus.com/intel-processor-types-release-date.html
View in Google Scholar

[45] International Technology Roadmap for Semiconductors, 2008, http://www.itrs.net/Links/2008ITRS/home2008.htm
View in Google Scholar

[46] The singularity is near, http://singularity.com/charts
View in Google Scholar

Downloads

Submitted

2023-06-26

Published

2010-03-30

Issue

Section

ARTICLES FROM THIS ISSUE

How to Cite

[1]
L. Łukasiak and A. Jakubowski, “History of Semiconductors”, JTIT, vol. 39, no. 1, pp. 3–9, Mar. 2010, doi: 10.26636/jtit.2010.1.1015.

Most read articles by the same author(s)

<< < 1 2 3 4