Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices

Authors

  • Arkadiusz Malinowski
  • Daniel Tomaszewski
  • Lidia Łukasiak
  • Andrzej Jakubowski
  • Makoto Sekine
  • Masaru Hori
  • Michael L. Korwin-Pawlowski

DOI:

https://doi.org/10.26636/jtit.2009.4.960

Keywords:

FinFET, line edge roughness, parameter variability, plasma etching, technology computer aided design (TCAD)

Abstract

Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics have been calculated in order to evaluate the sensitivity of the FinFET electrical parameters on possible FinFET structure variability.

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Published

2009-12-30

Issue

No. 4 (2009)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Malinowski, “Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices”, JTIT, vol. 38, no. 4, pp. 45–50, Dec. 2009, doi: 10.26636/jtit.2009.4.960.

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