Low frequency noise in Si and Si/SiGe/Si PMOSFETs

Authors

  • Stephen M. Thomas
  • Marti J. Prest
  • Dominic J. F. Fulgoni
  • Adam R. Bacon
  • Tim J. Grasby
  • David R. Leadley
  • Evan H. C. Parker
  • Terence E. Whall

DOI:

https://doi.org/10.26636/jtit.2007.2.810

Keywords:

electronic noise, silicon germanium heterostructures, MOSFET, dynamic threshold mode

Abstract

Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.

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Published

2007-06-30

Issue

No. 2 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
S. M. Thomas, “Low frequency noise in Si and Si/SiGe/Si PMOSFETs”, JTIT, vol. 28, no. 2, pp. 64–68, Jun. 2007, doi: 10.26636/jtit.2007.2.810.