New method of numerical modelling of optical field transformation by inhomogeneous semiconductor layer with time-varying parameters

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DOI:

https://doi.org/10.26636/jtit.2000.1-2.6

Keywords:

optical field transformation, wavelength conversion, nonlinear phenomena in semiconductor

Abstract

A time-domain model of a semiconductor layer with time-dependent inhomogeneous permittivity or conductivity is investigated by solving direct and inverse problems using a novel method, revealing a possibility of wavelength shifting and other desirable optical field transformation, as well as a remote diagnostics of fast time-varying inhomogeneous structures.

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References

[1] M. A. Guzev and V. I. Klyatskin, Waves in Random Media, vol. 3, pp. 307–315, 1993.
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[2] M. A. Guzev, V. I. Klyatskin, and G. V. Popov, Waves in Random Media, vol. 2, pp. 117–123, 1992.
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[3] V. I. Klyatskin, AMS Lectures in Applied Mathematics, vol. 27, Providence, RI: American Mathematical Society, pp. 447–476, 1991.
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Submitted

2023-04-06

Published

2000-06-30

Issue

No. 1-2 (2000)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2000 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
I. Y. Vorgul and M. Marciniak, “New method of numerical modelling of optical field transformation by inhomogeneous semiconductor layer with time-varying parameters”, JTIT, vol. 1, no. 1-2, pp. 83–84, Jun. 2000, doi: 10.26636/jtit.2000.1-2.6.

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