CVD growth of high speed SiGe HBTs using SiH4

Authors

  • Henry H. Radamson
  • Jan Grahn
  • Gunnar Landgren

DOI:

https://doi.org/10.26636/jtit.2000.3-4.32

Keywords:

SiGe, epitaxy, HBT, silane

Abstract

The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a~higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.

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Published

2000-12-30

Issue

No. 3-4 (2000)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2000 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
H. H. Radamson, J. Grahn, and G. Landgren, “CVD growth of high speed SiGe HBTs using SiH4”, JTIT, vol. 2, no. 3-4, pp. 10–14, Dec. 2000, doi: 10.26636/jtit.2000.3-4.32.