DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content

Authors

  • Sergiy Durov
  • Oleg A. Mironov
  • Maksym Myronov
  • Terence E. Whall
  • Thomas Hackbarth
  • Georg Hoeck
  • Hans-Joest Herzog
  • Ulf Konig
  • Hans von Kanel

DOI:

https://doi.org/10.26636/jtit.2005.1.284

Keywords:

SiGe, metamorphic MOSFET, LF-noise, I-V, C-V, effective hole mobility

Abstract

Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.

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Published

2005-03-30

Issue

No. 1 (2005)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2005 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
S. Durov, “DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content”, JTIT, vol. 19, no. 1, pp. 101–111, Mar. 2005, doi: 10.26636/jtit.2005.1.284.