On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs

Authors

  • Adelmo Ortiz-Conde
  • Francisco J. García Sánchez
  • Juin J. Liou

DOI:

https://doi.org/10.26636/jtit.2000.3-4.28

Keywords:

threshold voltage, channel length, series resistance, parameter extraction

Abstract

The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation

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Published

2000-12-30

Issue

No. 3-4 (2000)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2000 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
A. Ortiz-Conde, F. J. García Sánchez, and J. J. Liou, “On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs”, JTIT, vol. 2, no. 3-4, pp. 43–58, Dec. 2000, doi: 10.26636/jtit.2000.3-4.28.