Recent developments in vertical MOSFETs and SiGe HBTs

Abstract

There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT`s in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT`s with SOI-CMOS.