Recent developments in vertical MOSFETs and SiGe HBTs
DOI:
https://doi.org/10.26636/jtit.2004.1.232Keywords:
vertical MOSFET, HBT, SOIAbstract
There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.
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