Optical gain in one-dimensional photonic band gap structures with n-i-p-i crystal layers

Authors

  • Igor S. Nefedov Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences image/svg+xml
  • Victor N. Gusyatnikov Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences image/svg+xml
  • Marian Marciniak National Institute of Telecommunications image/svg+xml
  • Valerii K. Kononenko B.I. Stepanov Institute of Physics image/svg+xml
  • Dmitrii V. Ushakov B.I. Stepanov Institute of Physics image/svg+xml

DOI:

https://doi.org/10.26636/jtit.2002.1.107

Keywords:

photonic crystal, doping superlattice, optical gain, tunable source

Abstract

The gain enhancement in a layered periodic photonic band gap structure containing active medium based on GaAs n-i-p-i superlattices separated by AlGaAs layers is analyzed. The dependences of extinction coefficient and refractive index on excitation level and wavelength are presented. Transmission characteristics of a probe light versus excitation level are calculated. It is shown that the threshold of generation can be essentially reduced if the wavelength of probe light falls to the band gap edge.

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References

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Submitted

2023-04-07

Published

2002-03-30

Issue

No. 1 (2002)

Section

RESEARCH ARTICLES

License

Copyright (c) 2002 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
I. S. Nefedov, V. N. Gusyatnikov, M. Marciniak, V. K. Kononenko, and D. V. Ushakov, “Optical gain in one-dimensional photonic band gap structures with n-i-p-i crystal layers”, JTIT, vol. 7, no. 1, pp. 60–64, Mar. 2002, doi: 10.26636/jtit.2002.1.107.

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