Large-Signal RF Modeling with the EKV3 MOSFET Model

Authors

  • Maria-Anna Chalkiadaki
  • Matthias Bucher

DOI:

https://doi.org/10.26636/jtit.2010.1.1060

Keywords:

compact model, EKV3 model, large-signal, loadpull, MOSFET model, radio frequency

Abstract

This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.

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Published

2010-03-30

Issue

No. 1 (2010)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M.-A. Chalkiadaki and M. Bucher, “Large-Signal RF Modeling with the EKV3 MOSFET Model”, JTIT, vol. 39, no. 1, pp. 29–33, Mar. 2010, doi: 10.26636/jtit.2010.1.1060.

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