MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and

Authors

  • Włodzimierz Strupiński
  • Kamil Kosiel
  • Agata Jasik
  • Rafał Jakieła
  • Andrzej Jeleński
  • Eric Kollberg
  • Larse Dillner
  • Muhammat Nawaz

DOI:

https://doi.org/10.26636/jtit.2002.1.103

Keywords:

epitaxy InP, MOVPE, microwave generation

Abstract

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.

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Published

2002-03-30

Issue

No. 1 (2002)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2002 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
W. Strupiński, “MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and”, JTIT, vol. 7, no. 1, pp. 8–10, Mar. 2002, doi: 10.26636/jtit.2002.1.103.