1.
Durov S, Mironov OA, Myronov M, Whall TE, Hackbarth T, Hoeck G, et al. DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content. JTIT [Internet]. 2005 Mar. 30 [cited 2024 Dec. 12];19(1):101-1. Available from: https://jtit.pl/jtit/article/view/284