STĘSZEWSKI, Jędrzej; JAKUBOWSKI, Andrzej; L. KORWIN-PAWLOWSKI, Michael. Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys. Journal of Telecommunications and Information Technology, [S. l.], v. 29, n. 3, p. 93–95, 2007. DOI: 10.26636/jtit.2007.3.837. Disponível em: https://jtit.pl/jtit/article/view/837. Acesso em: 12 dec. 2024.