WALCZAK, Jakub; MAJKUSIAK, Bogdan. Electron mobility and drain current in strained-Si MOSFET. Journal of Telecommunications and Information Technology, [S. l.], v. 29, n. 3, p. 84–87, 2007. DOI: 10.26636/jtit.2007.3.835. Disponível em: https://jtit.pl/jtit/article/view/835. Acesso em: 20 apr. 2026.