BAKOWSKI, Mietek; SCHÖNER, Adolf; ERICSSON, Per; STRÖMBERG, Helena; NAGASAWA, Hiroyuki; ABE, Masayuki. Development of 3C-SiC MOSFETs. Journal of Telecommunications and Information Technology, [S. l.], v. 28, n. 2, p. 49–56, 2007. DOI: 10.26636/jtit.2007.2.808. Disponível em: https://jtit.pl/jtit/article/view/808. Acesso em: 18 apr. 2026.