JANIK, Tomasz; MAJKUSIAK, Bogdan; KORWIN-PAWŁOWSKI, Michał. Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics. Journal of Telecommunications and Information Technology, [S. l.], v. 3, n. 1, p. 65–69, 2001. DOI: 10.26636/jtit.2001.1.38. Disponível em: https://jtit.pl/jtit/article/view/38. Acesso em: 12 dec. 2024.