RADAMSON, Henry H.; GRAHN, Jan; LANDGREN, Gunnar. CVD growth of high speed SiGe HBTs using SiH4. Journal of Telecommunications and Information Technology, [S. l.], v. 2, n. 3-4, p. 10–14, 2000. DOI: 10.26636/jtit.2000.3-4.32. Disponível em: https://jtit.pl/jtit/article/view/32. Acesso em: 12 dec. 2024.