DUROV, Sergiy; MIRONOV, Oleg A.; MYRONOV, Maksym; WHALL, Terence E.; HACKBARTH, Thomas; HOECK, Georg; HERZOG, Hans-Joest; KONIG, Ulf; KANEL, Hans von. DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content. Journal of Telecommunications and Information Technology, [S. l.], v. 19, n. 1, p. 101–111, 2005. DOI: 10.26636/jtit.2005.1.284. Disponível em: https://jtit.pl/jtit/article/view/284. Acesso em: 12 dec. 2024.