SiGe HBT wideband amplifier for millimeter wave applications

Authors

  • Marco Krečmar
  • Nils Noether
  • Georg Boeck

DOI:

https://doi.org/10.26636/jtit.2007.1.742

Keywords:

wideband amplifie, HBT, SiGe, millimeter wave, bipolar integrated circuits

Abstract

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.

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Published

2007-03-30

Issue

No. 1 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M. Krečmar, N. Noether, and G. Boeck, “SiGe HBT wideband amplifier for millimeter wave applications”, JTIT, vol. 27, no. 1, pp. 8–12, Mar. 2007, doi: 10.26636/jtit.2007.1.742.