Performance and operation of stressed dual gap RF MEMS varactors

Authors

  • Greg McFeetors
  • Michal Okoniewski

DOI:

https://doi.org/10.26636/jtit.2007.1.736

Keywords:

electromechanical systems (MEMS), varactor, capacitors, Q factor

Abstract

The design, fabrication and measurement of a continuously tunable RF MEMS capacitor is described. The capacitor’s dual gap height architecture allows for electrostatic tuning with low resistive loss and a large tuning range. A new dual tuning scheme is introduced for use with two voltage sources. This dual tuning, coupled with a stress-induced bridge, is used to reach further device tuning. Measurements indicate a continuously tunable capacitance range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.

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Published

2007-03-30

Issue

No. 1 (2007)

Section

ARTICLES FROM THIS ISSUE

License

Copyright (c) 2023 Journal of Telecommunications and Information Technology

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
G. McFeetors and M. Okoniewski, “Performance and operation of stressed dual gap RF MEMS varactors”, JTIT, vol. 27, no. 1, pp. 3–7, Mar. 2007, doi: 10.26636/jtit.2007.1.736.